sot89 npn silicon power (switching) transistor isssue 1 - march 1999 features * 2w power dissipation * 6a peak pulse current * gain of 400 @i c =1amp * very low saturation voltage complimentary type - fcx790a partmarking detail - 690 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 45 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v peak pulse current ** i cm 6a continuous collector current i c 2a power dissipation at t amb =25c p tot 1 ? 2 ? w w operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 15x15x0.6mm ? maximum power dissipation is calculated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for these devices refer to the handling instructions for soldering surface mount components. c b c e FCX690B
electrical characteristics (at t amb = 25c) parameter symbol min typ max unit conditions. collector-base breakdown voltage v (br)cbo 45 v i c =100 a collector-emitter breakdown voltage v (br)ceo 45 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 a collector cut-off current i cbo 0.1 a v cb =35v emitter cut-off current i ebo 0.1 a v eb =4v collector-emitter saturation voltage v ce(sat) 80 300 mv mv i c =0.1a, i b =0.5ma * i c =1a, i b =5ma * base-emitter saturation voltage v be(sat) 0.9 v i c =1a, i b =10ma * base-emitter turn-on voltage v be(on) 0.85 v i c =1a, v ce =2v * static forward current transfer ratio h fe 500 400 150 i c =100ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 16 pf v cb =10v, f=1mhz switching times t on t off 33 1300 ns ns i c =500ma, i b1 =i b2 =50ma v cc =10v *measured under pulsed conditions. pulse width=300 s. duty cycle 2% FCX690B
FCX690B -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (s at ) - (v olts) v ce(sat) v i c i c - collector current (amps) v c e (s at ) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - normalised gain v b e (s at ) - ( v o lts ) v b e - (v olts) i c - co l le c to r cur r e nt ( am ps) v ce =2v v ce =2v 1.5k 1k 500 h f e - t ypical gain v ce - collector voltage (volts) safe operating area 0.1 100 11 0 0.01 0.1 1 10 single pulse test at t amb =25c t amb =25c i c /i b =100 -55c +25c +100c +175c 0 0 -55c +25c +100c +175c i c /i b =100 i c /i b =10 i c /i b =200 i c /i b =100 d.c. 1s 100ms 10ms 1.0ms 0.1ms
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